Title :
A 622 Mb/s monolithically integrated InGaAs/InP four-channel p-i-n FET receiver array
Author :
Akahori, Y. ; Ikeda, M. ; Uchida, N. ; Yoshida, J. ; Suzuki, Y.
Author_Institution :
NTT Opto-electron. Lab., Kanagawa Pref., Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
The authors describe the sensitivity and crosstalk characteristics of a long-wavelength monolithically integrated four-channel photoreceiver array. This receiver consists of 4 p-i-n PDs, 24 JFETs, and 28 level-shift diodes. The device is fabricated using MOVPE-grown crystals and a Be ion implantation technique. The receiver chip demonstrates a sensitivity of between -30.6 and -31.4 dBm, and crosstalk below -20 dB over its operating frequency range. Sensitivity deterioration due to crosstalk is demonstrated and is shown to be a critical factor in system performance. The crosstalk is mainly due to parasitic inductances on the external power supply circuits.<>
Keywords :
III-V semiconductors; crosstalk; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; sensitivity; 622 Mbit/s; Be ion implantation technique; InGaAs-InP; JFETs; MOVPE-grown crystals; crosstalk; external power supply circuits; field effect transistors; four-channel p-i-n FET receiver array; level-shift diodes; long-wavelength; monolithically integrated; operating frequency range; parasitic inductances; photodiodes; photoreceiver array; phototransistors; receiver chip; semiconductors; sensitivity; system performance; Crosstalk; Crystals; Frequency; Indium gallium arsenide; Indium phosphide; Ion implantation; JFETs; P-i-n diodes; PIN photodiodes; System performance;
Journal_Title :
Photonics Technology Letters, IEEE
