Title :
Active optical NOR logic devices using surface-emitting lasers
Author :
Lee, Y.H. ; Song, J.I. ; Kim, M.S. ; Shim, C.S. ; Tell, B. ; Leibenguth, R.E.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
5/1/1992 12:00:00 AM
Abstract :
Cascadable active laser logic devices are described, demonstrating NOR and INVERTER functions with a negative optical gain of five. The surface-emitting laser logic device consists of an AlGaAs superlattice surface-emitting laser discretely connected to an AlGaAs heterojunction phototransistor in parallel. The optical logic output of 0.5 mW is controlled off with 100 mu W incident power (44 mu W absorbed) on the heterojunction phototransistor part of the device.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical logic; phototransistors; semiconductor laser arrays; 0.5 mW; 100 muW; 44 muW; AlGaAs diode lasers; AlGaAs heterojunction phototransistor; AlGaAs superlattice surface-emitting laser; INVERTER functions; absorbed power; active laser logic devices; active optics; cascadable logic; incident power; negative optical gain; optical NOR logic devices; optical logic output; parallel optical interconnections; semiconductor superlattices; semiconductors; surface-emitting lasers; Logic devices; Optical arrays; Optical devices; Optical modulation; Optical saturation; Optical sensors; Optical superlattices; Phased arrays; Surface emitting lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
