Title :
Characterization & improvement of SNM in deep submicron SRAM design
Author :
Singh, S.K. ; Singh, S.V. ; Kausik, B.K. ; Chauhan, C. ; Tripathi, T.
Author_Institution :
Dept. of Electron. & Commun., IPEC, Ghaziabad, India
Abstract :
This paper examines the characteristics of static noise margin (SNM) of 6T SRAM Cell. The existing architectures of SRAM are first investigated, and after that a suitable basic 6T SRAM structure is selected. An analysis of the impact of parameters viz Cell ratio (CR), Pull up ratio (PR) and Supply voltage (+VDD) on the SNM was carried out with a view to optimizing the performance of SRAM cell. It has been observed that the SNM increases with the increasing value of CR. Similarly with increase in value of PR, an increase in SNM was observed. Finally, Body biasing technique has been used to improve the SNM of 6T SRAM cell in 28nm technology at 25°C.
Keywords :
SRAM chips; integrated circuit design; integrated circuit noise; 6T SRAM cell; SNM characterization; SNM improvement; body biasing technique; cell ratio; deep submicron SRAM design; pull up ratio; size 28 nm; static noise margin; supply voltage; temperature 25 degC; Computer architecture; Inverters; Microprocessors; Noise; SRAM cells; Transistors; CR; DRV; PR; SNM; SRAM;
Conference_Titel :
Signal Processing and Integrated Networks (SPIN), 2014 International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-2865-1
DOI :
10.1109/SPIN.2014.6777013
