Title :
Monolithic InP HEMT V-band low-noise amplifier
Author :
Webster, Richard T. ; Slobodnik, Andrew J., Jr. ; Roberts, George A.
Author_Institution :
Rome Lab., Hanscom AFB, MA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
A fully monolithic indium phosphide high electron mobility transistor (InP HEMT) two-stage low-noise amplifier has achieved a noise figure, of 4.2 dB with an associated gain of 15.25 dB over the band from 56 to 60 GHz. Noise matching and bias decoupling are accomplished on-chip. The successful performance of the amplifier is credited to accurate characterization of the active and passive devices that make up the circuit.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; indium compounds; microwave amplifiers; 15.25 dB; 4.2 dB; 56 to 60 GHz; InP; bias decoupling; gain; monolithic HEMT V-band amplifier; noise figure; noise matching; two-stage low-noise amplifier; Circuit noise; Gain; HEMTs; Impedance matching; Indium phosphide; Low-noise amplifiers; MODFETs; Microstrip; Noise figure; Scattering parameters;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
