Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET´s

Author

Laskar, J. ; Kruse, J. ; Feng, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

2

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

242

Lastpage

244

Abstract

The cryogenic microwave performance of 0.5*300- mu m gate ion-implanted GaAs MESFETs is presented. The devices studied have been fabricated as part of a process control monitor chip (PCM) which uses comparable industry standard design rules. Detailed small-signal element modeling has been performed to determine the temperature dependence of important physical parameters over a lattice temperature range from 300 K to 115 K. The authors find appreciable improvement in cut-off frequency (f/sub T/) and well behaved temperature dependence of transconductance (g/sub m/) and gate-source capacitance (C/sub gs/). Empirical relations for the temperature dependence of f/sub T/, the maximum frequency of oscillation (f/sub max/), g/sub m/ and C/sub gs/, that should provide accurate temperature-dependent device and circuit models are presented.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; capacitance; cryogenics; gallium arsenide; semiconductor device models; solid-state microwave devices; 0.55 micron; 115 to 300 K; GaAs; cryogenic microwave performance; cut-off frequency; gate-length; gate-source capacitance; industry standard design rules; ion-implanted GaAs MESFETs; lattice temperature range; maximum frequency of oscillation; process control monitor chip; small-signal element modeling; temperature dependence; transconductance; Cryogenics; Gallium arsenide; Industrial control; MESFETs; Microwave devices; Monitoring; Phase change materials; Process control; Temperature dependence; Textile industry;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.136519

Filename

136519