• DocumentCode
    1178752
  • Title

    A CMOS temperature-compensated current reference

  • Author

    Sansen, Willy M. ; Eynde, Frank Op´t ; Steyaert, Michiel

  • Author_Institution
    Dept. Elektrotechniek, Katholiek Univ. Leuven, Heverlee, Belgium
  • Volume
    23
  • Issue
    3
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    821
  • Lastpage
    824
  • Abstract
    A temperature-compensated current reference for CMOS integrated circuits based on a MOSFET as current-defining element, is described. To minimize the mass-production cost, it uses no external components nor trimming procedures. Comparison with classical current references with a resistor as a current-defining element shows a considerable improvement of the relative tolerance on the current. Theoretical expressions are presented and compared with experimental results from an integrated prototype. For devices from the same batch, the standard deviation is measured to be 2.5%, and the temperature dependence is 3% from 0 to 80 degrees C. From theoretical equations, the standard deviation of devices from different batches is expected to be about 15%.<>
  • Keywords
    CMOS integrated circuits; compensation; linear integrated circuits; reference circuits; CMOS integrated circuits; MOSFET current defining element; temperature-compensated current reference; CMOS integrated circuits; Costs; Integrated circuit measurements; MOSFET circuits; Measurement standards; Optimized production technology; Prototypes; Resistors; Temperature dependence; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.324
  • Filename
    324