DocumentCode
1178752
Title
A CMOS temperature-compensated current reference
Author
Sansen, Willy M. ; Eynde, Frank Op´t ; Steyaert, Michiel
Author_Institution
Dept. Elektrotechniek, Katholiek Univ. Leuven, Heverlee, Belgium
Volume
23
Issue
3
fYear
1988
fDate
6/1/1988 12:00:00 AM
Firstpage
821
Lastpage
824
Abstract
A temperature-compensated current reference for CMOS integrated circuits based on a MOSFET as current-defining element, is described. To minimize the mass-production cost, it uses no external components nor trimming procedures. Comparison with classical current references with a resistor as a current-defining element shows a considerable improvement of the relative tolerance on the current. Theoretical expressions are presented and compared with experimental results from an integrated prototype. For devices from the same batch, the standard deviation is measured to be 2.5%, and the temperature dependence is 3% from 0 to 80 degrees C. From theoretical equations, the standard deviation of devices from different batches is expected to be about 15%.<>
Keywords
CMOS integrated circuits; compensation; linear integrated circuits; reference circuits; CMOS integrated circuits; MOSFET current defining element; temperature-compensated current reference; CMOS integrated circuits; Costs; Integrated circuit measurements; MOSFET circuits; Measurement standards; Optimized production technology; Prototypes; Resistors; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.324
Filename
324
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