Title :
Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique
Author :
GieBel, T. ; Goser, Karl
Author_Institution :
Bauelemente der Elecktrotech., Dortmund Univ., West Germany
Abstract :
The gated-diode measurement technique characterizes the physical damage induced in n-channel MOSFETs during hot-carrier stress. The results show that the gate oxide in the channel region is not affected by hot-carrier stress. The most severe damage is located in the gate oxide above the drain-gate overlap region. Furthermore, the measurements show that the density of generation centers in the substrate is increased after hot-carrier stress.<>
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor device testing; density of generation centers; drain-gate overlap region; gate oxide; gated-diode measurement technique; hot-carrier stress; n-channel MOSFETs; physical damage; Degradation; Density measurement; Diodes; Heating; Hot carriers; MOSFETs; Measurement techniques; P-n junctions; Stress measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
