• DocumentCode
    1179074
  • Title

    Determination of source and drain series resistances of ultra-short gate-length MODFETs

  • Author

    Liu, Shih-Ming J. ; Fu, Shih-Tsang ; Thurairaj, Mohan ; Das, Mukunda B.

  • Author_Institution
    Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    10
  • Issue
    2
  • fYear
    1989
  • Firstpage
    85
  • Lastpage
    87
  • Abstract
    A practical method to evaluate the parasitic source and drain series resistances of modulation-doped FETs is presented. The method is based on a modified gate-probe technique that uses the gate current crowding phenomenon. It is suitable for complex heterostructure devices since the carrier transport mechanism and physical structure properties around the gate region need not conform to ideal models.<>
  • Keywords
    electric resistance measurement; high electron mobility transistors; probes; semiconductor device testing; MODFET; complex heterostructure devices; drain series resistances; gate current crowding phenomenon; modified gate-probe technique; parasitic series resistance; source series resistance; ultrashort gate length; Conducting materials; Diodes; Epitaxial layers; FETs; HEMTs; MODFETs; Mechanical factors; Proximity effect; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.32437
  • Filename
    32437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179074