Title :
Determination of source and drain series resistances of ultra-short gate-length MODFETs
Author :
Liu, Shih-Ming J. ; Fu, Shih-Tsang ; Thurairaj, Mohan ; Das, Mukunda B.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
A practical method to evaluate the parasitic source and drain series resistances of modulation-doped FETs is presented. The method is based on a modified gate-probe technique that uses the gate current crowding phenomenon. It is suitable for complex heterostructure devices since the carrier transport mechanism and physical structure properties around the gate region need not conform to ideal models.<>
Keywords :
electric resistance measurement; high electron mobility transistors; probes; semiconductor device testing; MODFET; complex heterostructure devices; drain series resistances; gate current crowding phenomenon; modified gate-probe technique; parasitic series resistance; source series resistance; ultrashort gate length; Conducting materials; Diodes; Epitaxial layers; FETs; HEMTs; MODFETs; Mechanical factors; Proximity effect; Voltage;
Journal_Title :
Electron Device Letters, IEEE
