High-performance millimeter-wave ion-implanted GaAs MESFETs

Author

Wang, G.W. ; Feng, Milton ; Lau, C.L. ; Ito, C. ; Lepkowski, Thomas R.

Author_Institution

Ford Microelectron. Inc., Colorado Springs, CO, USA

Volume

10

Issue

2

fYear

1989

Firstpage

95

Lastpage

97

Abstract

GaAs MESFETs (metal-epitaxial-semiconductor-field-effect transistors) with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AlGaAs/InGaAs pseudomorphic HEMT (high-electron-mobility transistor) devices. Implanted MESFETs with 0.5- mu m gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency f/sub 1/ of 48 GHz and a maximum-available-gain cutoff frequency f/sub max/ greater than 100 GHz are achieved. These results clearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.5 micron; 100 GHz; 350 mS; 48 GHz; GaAs; GaAs substrates; MM-wave MESFETs; S-parameter measurements; current-gain cutoff frequency; extrinsic transconductance; gate lengths; ion-implanted active channels; maximum-available-gain cutoff frequency; millimeter-wave IC; Cutoff frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.32440

Filename

32440