Title :
Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 μm
Author :
Gupta, J.A. ; Barrios, P.J. ; Zhang, X. ; Lapointe, J. ; Poitras, D. ; Pakulski, G. ; Wu, X. ; Delâge, A.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
9/15/2005 12:00:00 AM
Abstract :
The first 1.55 μm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3×589 μm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nitrogen compounds; quantum well lasers; ridge waveguides; semiconductor epitaxial layers; wide band gap semiconductors; 1.55 micron; 132 mA; 20 to 70 C; 3 micron; 589 micron; 83 K; CW threshold current; GaInNAsSb-GaNAs; double quantum well active region; laser diodes; molecular beam epitaxy; narrow ridge waveguide devices; room-temperature continuous-wave operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052712
