DocumentCode
1179570
Title
Terahertz electroluminescence from GaSb/AlSb quantum cascade laser
Author
Yasuda, H. ; Hosako, I. ; Miyashita, S. ; Patrashin, M.
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Volume
41
Issue
19
fYear
2005
fDate
9/15/2005 12:00:00 AM
Firstpage
1062
Lastpage
1063
Abstract
A phonon depopulation GaSb/AlSb quantum cascade laser was fabricated for the first time. The low longitudinal-optical phonon energy and small effective electron mass of GaSb enables a low electric field at the lasing threshold and a wide design range. The frequency of oscillation was designed to be 2.6 THz. With an increase of injection current, an abrupt increase of luminescence was observed.
Keywords
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; phonons; quantum cascade lasers; submillimetre wave lasers; 2.6 THz; GaSb-AlSb; III-V semiconductors; effective electron mass; injection current; longitudinal-optical phonon energy; phonon depopulation; phonons; quantum cascade lasers; submillimetre wave lasers; terahertz electroluminescence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051994
Filename
1512757
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