• DocumentCode
    1179661
  • Title

    GaN-based quantum dot infrared photodetector operating at 1.38 μm

  • Author

    Doyennette, L. ; Nevou, L. ; Tchernycheva, M. ; Lupu, A. ; Guillot, F. ; Monroy, E. ; Colombelli, R. ; Julien, F.H.

  • Author_Institution
    Inst. d´´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
  • Volume
    41
  • Issue
    19
  • fYear
    2005
  • fDate
    9/15/2005 12:00:00 AM
  • Firstpage
    1077
  • Lastpage
    1078
  • Abstract
    A GaN/AlN quantum-dot infrared photodetector based on intraband absorption and lateral carrier transport has been demonstrated for the first time. The photocurrent spectrum is peaked at λ=1.38 μm at a temperature of 77 K and it is p-polarised. The signal is due to the dot absorption from the s- to the pz-shell.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum dots; wide band gap semiconductors; 1.38 micron; 77 K; GaN-AlN; dot absorption; intraband absorption; lateral carrier transport; pz-shell; photocurrent spectrum; quantum dot infrared photodetector; s-shell;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052598
  • Filename
    1512767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1179661