Title :
GaN-based quantum dot infrared photodetector operating at 1.38 μm
Author :
Doyennette, L. ; Nevou, L. ; Tchernycheva, M. ; Lupu, A. ; Guillot, F. ; Monroy, E. ; Colombelli, R. ; Julien, F.H.
Author_Institution :
Inst. d´´Electronique Fondamentale, Univ. Paris-Sud, Orsay, France
fDate :
9/15/2005 12:00:00 AM
Abstract :
A GaN/AlN quantum-dot infrared photodetector based on intraband absorption and lateral carrier transport has been demonstrated for the first time. The photocurrent spectrum is peaked at λ=1.38 μm at a temperature of 77 K and it is p-polarised. The signal is due to the dot absorption from the s- to the pz-shell.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum dots; wide band gap semiconductors; 1.38 micron; 77 K; GaN-AlN; dot absorption; intraband absorption; lateral carrier transport; pz-shell; photocurrent spectrum; quantum dot infrared photodetector; s-shell;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20052598
