Investigation of negative differential resistance phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs structures

Author

Wang, Yeong-Her ; Liu, Meng Hwang ; Houng, Mau Phon ; Chen, J.F. ; Cho, Alfred Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

41

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1734

Lastpage

1741

Abstract

The negative differential resistance (NDR) phenomena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electrons have resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 Å thick AlSb barrier and 240 Å wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; negative resistance; resonant tunnelling devices; semiconductor quantum wells; GaSb-AlSb-InAs-GaSb-AlSb-InAs; GaSb/AlSb/InAs/GaSb/AlSb/InAs structures; broken-gap quantum well; current-voltage characteristics; negative differential resistance phenomena; peak current density; resonant interband tunnel structures; three-band model; Councils; Current density; Current-voltage characteristics; Electrons; Optical coupling; Proposals; Resonance; Resonant tunneling devices; Superlattices; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.324581

Filename

324581