Title :
Investigation of negative differential resistance phenomena in GaSb/AlSb/InAs/GaSb/AlSb/InAs structures
Author :
Wang, Yeong-Her ; Liu, Meng Hwang ; Houng, Mau Phon ; Chen, J.F. ; Cho, Alfred Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/1/1994 12:00:00 AM
Abstract :
The negative differential resistance (NDR) phenomena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electrons have resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thicknesses, e.g., 30 Å thick AlSb barrier and 240 Å wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; negative resistance; resonant tunnelling devices; semiconductor quantum wells; GaSb-AlSb-InAs-GaSb-AlSb-InAs; GaSb/AlSb/InAs/GaSb/AlSb/InAs structures; broken-gap quantum well; current-voltage characteristics; negative differential resistance phenomena; peak current density; resonant interband tunnel structures; three-band model; Councils; Current density; Current-voltage characteristics; Electrons; Optical coupling; Proposals; Resonance; Resonant tunneling devices; Superlattices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
