An analytical, aperture, and two-layer carrier diffusion MTF and quantum efficiency model for solid-state image sensors

Author

Stevens, Eric G. ; Lavine, James P.

Author_Institution

Microelctron. Technol. Group, Eastman Kodak Co., Rochester, NY, USA

Volume

41

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1753

Lastpage

1760

Abstract

A two-dimensional analytical model is formulated for calculating the pixel response, modulation transfer function (MTF), and quantum efficiency of front-side illuminated, solid-state image sensors. Included in this unified model are the effects of lateral diffusion of charge carriers within a two-layer substrate and less than full pixel sampling apertures. The results of this model are compared to those of a numerical, three-dimensional Monte Carlo algorithm and to the analytical results reported by Blouke and Robinson. We find good agreement between the quantum efficiency and MTF calculated by the present model and by the three-dimensional Monte Carlo method. However, we find higher quantum efficiency and lower MTF than the previously reported analytical two-layer model. The unified aspect of the present model correctly combines the effects of sampling aperture and lateral diffusion

Keywords

Monte Carlo methods; carrier lifetime; diffusion in solids; image sensors; optical transfer function; Monte Carlo algorithm; charge carriers; front-side illuminated; lateral diffusion; modulation transfer function; pixel response; quantum efficiency model; sampling apertures; solid-state image sensors; two-dimensional analytical model; two-layer carrier diffusion MTF; two-layer substrate; Algorithm design and analysis; Analytical models; Apertures; Charge carriers; Image sampling; Image sensors; Monte Carlo methods; Pixel; Solid state circuits; Transfer functions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.324584

Filename

324584