Title :
Optical spectroscopy of 1.3 μm (GaIn)(NAs)/GaAs lasers
Author :
Gerhardt, N. ; Hofmann, M.R. ; Ruhle, W.W.
Author_Institution :
AG Werkstoffe der Mikroelektron., Ruhr-Univ., Bochum, Germany
fDate :
2/1/2003 12:00:00 AM
Abstract :
The optical gain of MBE-grown and MOVPE-grown (GaIn)(NAs)/GaAs lasers and samples is investigated with different methods. A quantitative analysis of the experimental gain of commercial MBE-grown structures on the basis of a microscopic theory reveals that the gain is due to inhomogeneously broadened band-band transitions. In contrast, the authors´ analysis of an MOVPE-grown sample indicates that the optical gain is influenced by the locally varying environment of the nitrogen in the active region resulting in a strong shoulder in the gain spectra. The results demonstrate that the optical properties of (GaIn)(NAs)/GaAs strongly depend on the growth and preparation processes of the device under study.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; infrared spectra; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum wells; spectral line broadening; vapour phase epitaxial growth; (GaIn)(NAs)-GaAs; (GaIn)(NAs)/GaAs QW lasers; 1.3 micron; MBE-grown; MOVPE-grown; active region; gain spectra; inhomogeneously broadened band-band transitions; microscopic theory; optical gain; optical properties; optical spectroscopy;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030035