Title :
Magneto-tunnelling spectroscopy of nitrogen clusters in Ga(AsN) alloys
Author :
Neumann, A. ; Patanè, A. ; Eaves, L. ; Belyaev, A.E. ; Gollub, D. ; Forchel, A. ; Kamp, M.
Author_Institution :
Sch. of Phys. & Astron., Nottingham Univ., UK
fDate :
2/1/2003 12:00:00 AM
Abstract :
Magneto-transport studies in an n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure are described. This system acts as a resonant-tunnelling diode in which electrons can tunnel through the N-induced states in the Ga(AsN) layer. Magneto-tunnelling spectroscopy with magnetic fields parallel and perpendicular to the current direction is used to probe the nature, band-like or impurity-like, of the N states. The data indicate that the electron wavefunction of the N states is strongly localised and extends over distances smaller than 1.8 nm.
Keywords :
III-V semiconductors; Zeeman effect; aluminium compounds; gallium arsenide; gallium compounds; gyromagnetic effect; resonant tunnelling diodes; tunnelling spectroscopy; 1.8 nm; Ga(AsN) alloys; GaAs-AlAs-Ga(AsN); N states; N-induced states; band-like states; current direction; electron tunnelling; electron wavefunction; impurity-like states; magnetic fields; magneto-transport studies; magneto-tunnelling spectroscopy; n-i-n doped GaAs/AlAs/Ga(AsN) heterostructure; nitrogen clusters; resonant-tunnelling diode; strongly localised;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030036
