Structure optimisation of 1.3 μm (GaIn)(NAs)/GaAs in-plane lasers

The comprehensive three-dimensional fully self-consistent model of the 1.3 μm in-plane stripe-geometry (GaIn)(NAs)/GaAs diode laser has been applied to optimise its structure and to simulate its continuous-wave (CW) performance characteristics at and above room temperature (RT). To reduce the RT CW lasing threshold, optimal value of the laser stripe width has been found to be about 9 μm. The current-spreading part of the p-type cladding layer below etched areas on both sides of the mesa should be as thin as possible for technological reasons. For a 130 K temperature increase over RT (= 300 K), the T₀ laser parameter has been determined to be 122 K. Its value is steadily reduced from 130 K (just above RT) to 116 K (at around 400 K).