Title :
Simulation of gain and modulation bandwidths of 1300 nm RWG InGaAsN lasers
Author :
Yong, J.C.L. ; Rorison, J.M. ; Othman, M. ; Sun, H.D. ; Dawson, M.D. ; Williams, K.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fDate :
2/1/2003 12:00:00 AM
Abstract :
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 μm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; laser theory; laser transitions; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; 1300 nm; 250 micron; AlGaInAs; InGaAsN; InGaAsN laser gain; InGaAsN quantum well lasers; InGaAsP; MQW ridge waveguide lasers; dynamic behaviour; gain performance; high-temperature characteristics; modulation bandwidths; simulated material gain; small-signal modulation characteristics;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030048
