Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method

Author

Kubo, Nobuo ; Kusumoto, Naoto ; Inushima, Takashi ; Yamazaki, Shumpei

Author_Institution

Semicond. Energy Lab. Co. Ltd., Kanagawa, Japan

Volume

41

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1876

Lastpage

1879

Abstract

The electrical characteristics of excimer laser annealed (ELA) polycrystalline-Si thin film transistors (poly-Si TFT´s) were investigated. These results were compared to those of poly-Si TFT fabricated by solid phase crystallization (SPC). From the temperature dependence of the drain current, the activation energies of n-type poly-Si TFT´s were obtained. The activation energies have negative values under the gate voltage from 0 to 5 V. The negative activation energy together with small threshold voltage (V_th) are the main characteristics of ELA poly-Si TFT. Temperature dependencies of V _th, and field effect mobility are very similar to those of SPC. From these results, it is concluded that the trap state density of ELA poly-Si TFT is very small and the electrical characteristics can be explained by the band tail states localized at the grain boundary

Keywords

carrier mobility; electron traps; elemental semiconductors; laser beam annealing; semiconductor technology; silicon; thin film transistors; 0 to 5 V; Si; activation energies; band tail states; electrical characteristics; excimer laser annealing; fabrication; field effect mobility; grain boundary; n-type poly-Si TFTs; polycrystalline-Si thin film transistors; temperature dependence; threshold voltage; trap state density; Annealing; Crystallization; Electric variables; Glass; Grain boundaries; Solids; Substrates; Temperature dependence; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.324604

Filename

324604