Title :
An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications
Author :
Tian, H. ; Hulfachor, R.B. ; Ellis-Monaghan, J.J. ; Kim, K.W. ; Littlejohn, M.A. ; Hauser, J.R. ; Masnari, N.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
10/1/1994 12:00:00 AM
Abstract :
Performance and reliability of deep-submicron MOSFET´s employing super-steep-retrograde (SSR) channel doping configurations are examined using self-consistent Monte Carlo and drift-diffusion simulations. It is found that SSR channel doped MOSFET´s provide increased current drive and reduced threshold voltage shift when compared with conventional MOSFET structures. However, they also display a relatively higher substrate current and interface state generation rate. The physical mechanisms of performance enhancement/degradation and design tradeoffs for SSR channel doped MOSFET´s are discussed
Keywords :
Monte Carlo methods; insulated gate field effect transistors; reliability; semiconductor device models; semiconductor doping; current drive; deep-submicron MOSFET; design; drift-diffusion simulation; interface state generation; reliability; self-consistent Monte Carlo simulation; substrate current; super-steep-retrograde channel doping; threshold voltage; Degradation; Displays; Doping; Interface states; MOSFET circuits; Monte Carlo methods; Silicon; Substrates; Subthreshold current; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
