Title :
Physics and Technology of Dilute Nitrides for Optical Communications
Author :
Akcay, N. ; Erol, A. ; Mazzucato, S. ; Chalker, P.R. ; Joyce, T.B.
Author_Institution :
Istanbul Univeisity
fDate :
2/1/2003 12:00:00 AM
Abstract :
Dilute nitrides promise to be ideal material systems for applications in LEDs, pump laser diodes, photovoltaic cell production, Bragg filters, switches, photodetectors, wavelength converters and resonant cavity enhanced photodetectors, resonant cavity photodiodes, operating in the 1.3-1.7 μm spectral range. They are equally attractive for applications in high-speed electronic devices such as heterojunction bipolar transistors (HBTs).
Keywords :
electro-optical switches; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting diodes; optical communication equipment; optical materials; optical pumping; optical wavelength conversion; photodetectors; semiconductor lasers; semiconductor quantum wells; wavelength division multiplexing; 1.3 to 1.7 micron; Bragg filters; GaAlAs; GaAs; GaAs-AlAs; GaInAsN; IR spectral range; LEDs; dilute nitrides; heterojunction bipolar transistors; high-speed electronic devices; optical material systems; photodetectors; photovoltaic cells; pump laser diodes; resonant cavity enhanced photodetectors; switches; wavelength converters;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030043
