DocumentCode
1179962
Title
Physics and Technology of Dilute Nitrides for Optical Communications
Author
Akcay, N. ; Erol, A. ; Mazzucato, S. ; Chalker, P.R. ; Joyce, T.B.
Author_Institution
Istanbul Univeisity
Volume
150
Issue
1
fYear
2003
fDate
2/1/2003 12:00:00 AM
Abstract
Dilute nitrides promise to be ideal material systems for applications in LEDs, pump laser diodes, photovoltaic cell production, Bragg filters, switches, photodetectors, wavelength converters and resonant cavity enhanced photodetectors, resonant cavity photodiodes, operating in the 1.3-1.7 μm spectral range. They are equally attractive for applications in high-speed electronic devices such as heterojunction bipolar transistors (HBTs).
Keywords
electro-optical switches; gallium arsenide; heterojunction bipolar transistors; indium compounds; light emitting diodes; optical communication equipment; optical materials; optical pumping; optical wavelength conversion; photodetectors; semiconductor lasers; semiconductor quantum wells; wavelength division multiplexing; 1.3 to 1.7 micron; Bragg filters; GaAlAs; GaAs; GaAs-AlAs; GaInAsN; IR spectral range; LEDs; dilute nitrides; heterojunction bipolar transistors; high-speed electronic devices; optical material systems; photodetectors; photovoltaic cells; pump laser diodes; resonant cavity enhanced photodetectors; switches; wavelength converters;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20030043
Filename
1193707
Link To Document