Title :
High power mode-locked compound laser using a tapered semiconductor amplifier
Author :
Goldberg, Lew ; Mehuys, D. ; Welch, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A new type of a high power mode-locked laser, based on a tapered stripe traveling wave semiconductor amplifier and an additional separate narrow stripe gain element is described. Active mode-locking, achieved by RF modulation of the narrow stripe, resulted in pulses as short as 12 ps. Separately, maximum peak powers of 16 W and pulse energies above 0.5 nJ were observed.<>
Keywords :
laser mode locking; optical frequency conversion; optical modulation; semiconductor lasers; 0.5 J; 12 ps; 16 W; RF modulation; active mode-locking; high power mode-locked compound laser; maximum peak powers; narrow stripe gain element; pulse energies; tapered semiconductor amplifier; tapered stripe traveling wave semiconductor amplifier; High power amplifiers; Laser mode locking; Optical amplifiers; Power amplifiers; Power generation; Power lasers; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
