Tapered thickness MQW waveguide BH MQW lasers

Author

Kobayashi, H. ; Ekawa, M. ; Okazaki, N. ; Aoki, O. ; Ogita, S. ; Soda, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

6

Issue

9

fYear

1994

Firstpage

1080

Lastpage

1081

Abstract

We propose and demonstrate a novel 1.3 μm InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8/spl deg/ and 8.0/spl deg/, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical losses; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 mum; 19 mA; InGaAsP-InGaAsP; InGaAsP/InGaAsP multiple-quantum-well BH Fabry-Perot laser diode; MQW gain region; MQW tapered thickness waveguide; far-field FWHM; high coupling efficiency; high slope efficiency; low absorption loss; low threshold current; monolithically integrated; selective area growth; tapered thickness waveguide; tapered thickness waveguide BH MQW lasers; Absorption; Diode lasers; Fiber lasers; Laser beams; Optical coupling; Optical fiber devices; Optical waveguides; Quantum well devices; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.324674

Filename

324674