Title :
Size effects in Auger recombination for InGaAs quantum-wire structures
Author :
Wang, Jin ; Leburton, J.P.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
Abstract :
A theoretical investigation of Auger recombination in lattice-matched InGaAs/InGaAlAs quantum-wire structures is presented. The valence band structure is calculated by using a four-band Luttinger-Kohn Hamiltonian. CHCC, CHHH, CHHL and CHHS Auger processes are considered with the excited carrier being either in a confined (bound) state of the quantum wire, or an unconfined (unbound) state. The model uses Fermi statistics as well as a revaluation of the Coulomb interaction overlap integral for the calculation of the Auger recombination rate. Bound-unbound Auger processes are proven to be important nonradiative recombination mechanism in quantum-wire systems. It is also found that the Auger coefficient is much more sensitive to the well width in quantum-wire structures than in quantum-well structures.<>
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; band structure of crystalline semiconductors and insulators; electron-hole recombination; gallium arsenide; indium compounds; semiconductor quantum wires; size effect; Auger recombination; Auger recombination rate; Coulomb interaction overlap integral; Fermi statistics; InGaAs quantum-wire structures; InGaAs-InGaAlAs; InGaAs/InGaAlAs quantum-wire structures; bound-unbound Auger processes; confined bound state; excited carrier; four-band Luttinger-Kohn Hamiltonian; lattice-matched; nonradiative recombination mechanism; size effects; valence band structure; well width; Capacitive sensors; Carrier confinement; Effective mass; Indium gallium arsenide; Quantum mechanics; Quantum well lasers; Radiative recombination; Threshold current; Wave functions; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
