Tensile-strained multiple quantum-well structures for a large refractive index change caused by current injection

Author

Kimura, A. ; Nido, M. ; Suzuki, A.

Author_Institution

Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan

Volume

6

Issue

9

fYear

1994

Firstpage

1101

Lastpage

1104

Abstract

Tensile-strained multiple quantum-well (MQW) structures with camel-back shaped first valence sub-bands are proposed as structures with a large refractive index change caused by current injection. These structures have a high joint density of states at the absorption edge, and the injected carriers in the structures have a long lifetime because of separation in the k-space between electrons and holes. The refractive index change caused by current injection is calculated for camel-back InGaAs/InGaAsP strained MQW structures for 1.55 μm-wavelength light. These structures show a larger refractive index change than the other InGaAs/InGaAsP strained/unstrained MQW structures.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical modulation; refractive index; semiconductor lasers; semiconductor quantum wells; 1.55 /spl mu/m-wavelength light; 1.55 mum; InGaAs-InGaAsP; InGaAs/InGaAsP strained MQW structures; MQW structures; absorption edge; camel-back shaped first valence sub-bands; current injection; electrons; high joint density of states; holes; injected carriers; k-space; large refractive index change; long lifetime; optical modulators; semiconductor lasers; tensile-strained multiple quantum-well structures; Absorption; Charge carrier processes; Effective mass; Laser applications; Laser transitions; Optical refraction; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.324681

Filename

324681