DocumentCode :
1180493
Title :
A Novel Adaptive Design Methodology for Minimum Leakage Power Considering PVT Variations on Nanoscale VLSI Systems
Author :
Kim, Kyung Ki ; Kim, Yong-Bin
Author_Institution :
SUN Microsyst., Santa Clara, CA
Volume :
17
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
517
Lastpage :
528
Abstract :
This paper proposes a novel design method to minimize the leakage power during standby mode using a novel adaptive supply voltage and body-bias voltage generating technique for nanoscale VLSI systems. The process, voltage, and temperature (PVT) variations are monitored and controlled independently by their own dedicated systems. The minimum level of V DD and the optimum body-bias voltage are generated for different temperature and process conditions adaptively using a lookup table method based on the PVT monitoring and controlling systems. The power supply variations is accurately compensated adaptively through the monitoring circuits based on the propagation delay change of the inverter chains. The subthreshold current as well as gate-tunneling and band-to-band-tunneling currents are monitored and minimized adaptively by the optimally generated body-bias voltage. The proposed design method reduces the leakage power at least by 500 times for ISCAS´85 benchmark circuits designed using 32-nm CMOS technology comparing to the case where the method is not applied.
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; nanoelectronics; tunnelling; CMOS technology; ISCAS\´85 benchmark circuit; PVT variation; adaptive design methodology; band-to-band-tunneling current; body-bias voltage generating technique; gate-tunneling; leakage power; lookup table method; nanoscale VLSI system; power supply variations; propagation delay change; size 32 nm; subthreshold current; Leakage power; optimal $V_{rm Body}$ control; optimal $V_{rm DD}$ control; process, voltage, and temperature (PVT) variation;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2007958
Filename :
4796213
Link To Document :
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