DocumentCode :
1180749
Title :
A 2–40 GHz Active Balun Using 0.13 \\mu{\\rm m} CMOS Process
Author :
Huang, Bo-Jiun ; Huang, Bo-Jr ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng. & Grad., Nat. Taiwan Univ., Taipei
Volume :
19
Issue :
3
fYear :
2009
fDate :
3/1/2009 12:00:00 AM
Firstpage :
164
Lastpage :
166
Abstract :
A 2 to 40 GHz broadband active balun using 0.13 mum CMOS technology is presented in this letter. Using two-stage differential amplified pairs, the active balun can achieve a wideband performance with the gain compensation technique. This active balun exhibits a measured small signal gain of 0 plusmn1, with the amplitude imbalances below 0.5 dB and the phase differences of 180 plusmn10deg from 2 to 40 GHz. The core active balun has a low power consumption of 40 mW, and a compact area of 0.8 mm x 0.7 mm. This proposed balun achieved the highest operation frequency, the widest bandwidth, and the smallest size among all the reported active baluns.
Keywords :
CMOS integrated circuits; baluns; differential amplifiers; field effect MMIC; CMOS process; broadband active baluns; differential amplified pairs; field effect MMIC; frequency 2 GHz to 40 GHz; gain compensation; power 40 mW; size 0.13 mum; size 0.7 mm; size 0.8 mm; Active balun; differential pair; monolithic micro wave integrated circuit (MMIC);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2009.2013740
Filename :
4796236
Link To Document :
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