Through-Silicon Via (TSV)

Author

Motoyoshi, Makoto

Author_Institution

Tokyo Inst. of Technol. Yokohama, Yokohama

Volume

97

Issue

1

fYear

2009

Firstpage

43

Lastpage

48

Abstract

Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.

Keywords

CMOS image sensors; chip scale packaging; elemental semiconductors; high-speed techniques; large scale integration; mass production; silicon; CMOS image sensor fabrication; LSI cube; chip size package; high-speed signal processing; three-dimensional large-scale integration; through-silicon via technique; Application software; Chip scale packaging; Defense industry; Electronics industry; Image sensors; Large scale integration; Mass production; Military computing; Sensor arrays; Through-silicon vias; Chip size package (CSP); image sensor; micro bump; three-dimensional large-scale integration (3D-LSI); through-silicon via (TSV);

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2008.2007462

Filename

4796275