Title :
Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates
Author :
Pei, Y. ; Chen, Z. ; Brown, D. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
fDate :
4/1/2009 12:00:00 AM
Abstract :
Deep-submicrometer AlGaN/GaN HEMTs with integrated slant field plates have been fabricated. Simulation showed this technology had the ability to minimize both the dc-RF dispersion and parasitic capacitance. Prototype device results demonstrated an excellent millimeter-wave power density of 4.9 W/mm with a power-added efficiency of 45% at 30 GHz at a drain bias of 30 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN-GaN; frequency 30 GHz; voltage 30 V; Gallium nitride; high-electron mobility transistors; millimeter wave; power; slant field plate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2014790
