DocumentCode :
1181479
Title :
Current-Mode Logic in Organic Semiconductor Based on Source-Gated Transistors
Author :
Guo, Xiaojun ; Shannon, J.M.
Author_Institution :
Adv. Technol. Inst. Univ. of Surrey, Guildford
Volume :
30
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
365
Lastpage :
367
Abstract :
Due to the low mobility and the abundance of trap states in organic field-effect transistors (OFETs), the operation of conventional logic circuits-based OFETs needs a large voltage swing, and suffers large switching noise and low speed. In this letter, current-mode logic (CML) circuits composed of organic source-gated transistors (OSGTs) are proposed for high-speed signaling based on existing material and process technologies. Mixed-mode simulations show that CML circuits using simple resistive loads can still be operated much faster than an ideal conventional inverter with perfect active loads and OFETs free of traps. With the same supply voltage and device parameters, CML circuits can work with a wide range of signal swings. The superior analog performance of OSGTs is also shown to fit well with the design requirements for CML circuits in terms of low power supply, high output impedance, and stability.
Keywords :
logic circuits; organic field effect transistors; organic semiconductors; current-mode logic; high-speed signaling; logic circuits-based OFET; mixed-mode simulations; organic semiconductor; power supply; signal swings; source-gated transistors; Current-mode logic (CML); organic thin-film transistor (OTFT); source-gated transistor (SGT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2013489
Filename :
4796302
Link To Document :
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