DocumentCode :
1181491
Title :
Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications
Author :
Yoon, Sung-Min ; Jung, Soon-Won ; Lee, Seung-Yun ; Park, Young-Sam ; Yu, Byoung-Gon
Author_Institution :
Convergence Components & Mater. Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon
Volume :
30
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
371
Lastpage :
373
Abstract :
A new device concept for a programmable switch employing a phase-change memory element was proposed, in which a unique four-terminal structure having two operating channels was so designed as to effectively separate two functions of programming and pass-gating. The proposed device was successfully fabricated, and its operational behaviors were demonstrated.
Keywords :
phase change memories; programmable logic devices; four terminal structure; nonvolatile logic application; operating channels; phase change driven programmable switch; phase change memory element; Logic; nonvolatile; phase-change memory (PCM); programmable; switch;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2013879
Filename :
4796303
Link To Document :
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