• DocumentCode
    1181491
  • Title

    Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications

  • Author

    Yoon, Sung-Min ; Jung, Soon-Won ; Lee, Seung-Yun ; Park, Young-Sam ; Yu, Byoung-Gon

  • Author_Institution
    Convergence Components & Mater. Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon
  • Volume
    30
  • Issue
    4
  • fYear
    2009
  • fDate
    4/1/2009 12:00:00 AM
  • Firstpage
    371
  • Lastpage
    373
  • Abstract
    A new device concept for a programmable switch employing a phase-change memory element was proposed, in which a unique four-terminal structure having two operating channels was so designed as to effectively separate two functions of programming and pass-gating. The proposed device was successfully fabricated, and its operational behaviors were demonstrated.
  • Keywords
    phase change memories; programmable logic devices; four terminal structure; nonvolatile logic application; operating channels; phase change driven programmable switch; phase change memory element; Logic; nonvolatile; phase-change memory (PCM); programmable; switch;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2013879
  • Filename
    4796303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1181491