Title :
GaN-Based Power Flip-Chip LEDs With Cu Submount
Author :
Chang, S.J. ; Chen, W.S. ; Shei, S.C. ; Shen, C.F. ; Ko, T.K. ; Tsai, J.M. ; Lai, W.C. ; Sheu, J.K. ; Lin, A.J. ; Hung, S.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Nitride-based power flip-chip (FC) LEDs with Cu submount were proposed and prepared. With a much higher thermal conductivity, it was found that we can achieve a lower operation voltage under high-current injections and lower junction temperature from the FC LEDs with Cu submount. Compared with the power FC LEDs with Si submount, the reliability of the proposed device was also better.
Keywords :
III-V semiconductors; copper; flip-chip devices; gallium compounds; light emitting diodes; semiconductor device reliability; thermal conductivity; wide band gap semiconductors; Cu; GaN; copper submount; high-current injection; light emitting diode reliability; lower junction temperature; nitride-based power flip-chip LED; thermal conductivity; Cu; InGaN/GaN; LEDs; flip-chip; submount;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2014172
