Title :
MOSFET threshold extraction from voltage-only measurements
Author :
Galup-Montoro, C. ; Schneider, M.C. ; Koerich, A.L. ; Pinto, R.L.O.
Author_Institution :
Univ. Federal de Santa Catarina, Florianopolis, Brazil
fDate :
8/18/1994 12:00:00 AM
Abstract :
The authors describe a method for determining the MOS transistor parameters from voltage measurements by considering two transistors in series. The voltage characteristics at the intermediate node of the two connected transistors allow easy and direct determination of the threshold voltage, the pinch-off voltage and the slope factor
Keywords :
insulated gate field effect transistors; semiconductor device testing; voltage measurement; MOS transistor parameters; MOSFET threshold extraction; direct determination; pinchoff voltage; series connection; slope factor; voltage-only measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940979
