DocumentCode
1181915
Title
MOSFET threshold extraction from voltage-only measurements
Author
Galup-Montoro, C. ; Schneider, M.C. ; Koerich, A.L. ; Pinto, R.L.O.
Author_Institution
Univ. Federal de Santa Catarina, Florianopolis, Brazil
Volume
30
Issue
17
fYear
1994
fDate
8/18/1994 12:00:00 AM
Firstpage
1458
Lastpage
1459
Abstract
The authors describe a method for determining the MOS transistor parameters from voltage measurements by considering two transistors in series. The voltage characteristics at the intermediate node of the two connected transistors allow easy and direct determination of the threshold voltage, the pinch-off voltage and the slope factor
Keywords
insulated gate field effect transistors; semiconductor device testing; voltage measurement; MOS transistor parameters; MOSFET threshold extraction; direct determination; pinchoff voltage; series connection; slope factor; voltage-only measurements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940979
Filename
326268
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