Title :
Low cost fabrication of TSV-based silicon interposer using wet chemical etching and its application in 3D packaging
Author :
Jiaotuo Ye ; Xiao Chen ; Chunsheng Zhu ; Le Luo ; Gaowei Xu
Author_Institution :
SIMIT, Univ. of Chinese Acad. of Sci., Shanghai, China
Abstract :
TSV is an enabler for 3D integration of smart system. This paper presented a novel silicon interposer fabrication method based on double-sided anisotropic etching of (100) oriented silicon with the features of low cost and relatively high interconnection density. A trench structure was designed to decrease the diameter of the TSV. The integration process of TSV interconnections was investigated, including wafer thinning, via formation, via metallization. All the test vehicles passed the short/open test, and the electrical resistance of the TSV is about 1.2 Ohm. The interposer was applied to the 3D packaging of GaAs photodetector and readout circuit, and the test result showed an excellent signal output.
Keywords :
elemental semiconductors; etching; gallium arsenide; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; integrated circuit packaging; integrated circuit testing; photodetectors; readout electronics; silicon; three-dimensional integrated circuits; wetting; 3D integration; 3D packaging; GaAs; Si; TSV-based silicon interposer fabrication method; double-sided anisotropic etching; electrical resistance; interconnection density; metallization; photodetector; readout circuit; smart system; trench structure; wafer thinning; wet chemical etching; Erbium; Magnetic resonance imaging; 3D packaging; silicon interposer; wet etching;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922568
