DocumentCode
1182068
Title
Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm
Author
Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, Frederic ; Tournie, E.
Author_Institution
Inst. d´Electron. du Sud, Univ. Montpellier 2, Montpellier
Volume
45
Issue
5
fYear
2009
Firstpage
265
Lastpage
266
Abstract
Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 m at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 s, 5 ) operation was obtained at room temperature for 35 m-diameter devices with threshold current of 85 mA.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; optical pumping; quantum well lasers; surface emitting lasers; AlAsSb-GaSb; current 85 mA; electrically pumping; mid-infrared vertical-cavity surface-emitting lasers; multi-quantum-well active region; size 35 mum; solid-source molecular beam epitaxy; temperature 293 K to 298 K; tunnel junction;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20090134
Filename
4796356
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