Title :
Investigation of temporary bonding and release processes for TSV with copper pillar bumps
Author :
Xiangmeng Jing ; Feng Jiang ; Cheng Xu ; Kai Xue ; Fengwei Dai ; Zhaoqiang Li ; Wenqi Zhang
Author_Institution :
Nat. Center for Adv. Packaging, Wuxi, China
Abstract :
Temporary bonding and release processes are regarded as the critical technologies in 2.5D and 3D IC integration. The process is especially challenging when the device contains high topography structures like copper pillar bumps. This paper presents the results of simulation, bumping process, wafer temporary bonding, thinning and debonding. Through careful consideration and optimization of the above mentioned aspects, TSV wafers with 30 μm copper pillar bumps can be successfully released using the thermal-sliding debonding mechanism.
Keywords :
bonding processes; copper; three-dimensional integrated circuits; 2.5D IC integration; 3D IC integration; TSV wafers; bumping process; copper pillar bumps; release process; size 30 mum; thermal-sliding debonding mechanism; topography structure; wafer debonding; wafer temporary bonding; wafer thinning; Bonding; Copper; Glass; Silicon; Three-dimensional displays; Through-silicon vias; 3D integration; TSV; copper pillar bump; debonding; style; temporary bonding;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922602
