Author :
Kirstaedter, N. ; Ledentsov, Nikolay N. ; Grundmann, Marius ; Bimberg, Dieter ; Ustinov, V.M. ; Ruvimov, S.S. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Richter, Ulrike ; Werner, Philipp ; Gosele, U. ; Heydenreich, J.
Abstract :
Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; (InGa)As quantum dots; In0.5Ga0.5As; characteristic temperature; injection laser; laser diodes; low threshold laser; morphological transformation; pseudomorphic In0.5Ga0.5As layer; shallow mesa stripe; zero-dimensional states;
