Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model

Three-dimensional (3D) integration has been considered as the most promising method to overcome the interconnection bottleneck with through-silicon vias(TSVs) served as vertical signal channels. Three-dimensional integrated circuits (3D IC) meet the demands of high throughput, high scalability and low power consumption for future generation integrated circuits. Crosstalk is the dominant problem in signal integrity. While TSVs are bundled together as a cluster, the crosstalk coupling noise may lead to transmission errors. In this paper, we study several influencing factors of the crosstalk in the TSVs. Variations of space between two TSVs nets, different rise time of an attacking signal, various TSV stacking layers and three different types of communication models are modeled and analyzed to master their effect on the TSVs crosstalk. In order to verify the influence factors above, this paper proposes an equivalent electrical model of TSVs for crosstalk.