DocumentCode
1182632
Title
Subquarter-micrometre elevated source-and-drain MOSFET structure using polysilicon spacers
Author
Mirabedini, M.R. ; Goodwin-Johansson, S.H. ; Massoud, H.Z. ; Fair, R.B.
Author_Institution
Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
Volume
30
Issue
19
fYear
1994
fDate
9/15/1994 12:00:00 AM
Firstpage
1631
Lastpage
1632
Abstract
A novel subquarter-micrometre MOSFET with a selfaligned source and drain structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, and reduce the junction capacitance by over 30% through a reduction in junction area, as shown by PISCES simulations. A graded oxide spacer is used to decrease the parasitic gate-to-drain capacitance
Keywords
capacitance; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; PISCES simulations; Si; effective channel length; elevated drains; elevated sources; graded oxide spacer; junction area; junction capacitance; parasitic gate-to-drain capacitance; polysilicon spacers; selfaligned source-and-drain structure; subquarter-micrometre MOSFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941068
Filename
326342
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