Title :
Modified T-gates incorporating micro-airbridges to avoid mesa sidewall contact in AllnAs/GaInAs HEMTs
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich
fDate :
9/15/1994 12:00:00 AM
Abstract :
A technique for eliminating mesa sidewall contact problems in InP-based HEMTs has been developed. This technique uses T-gates with integrated micro-airbridges which span the critical region at the edge of the mesa avoiding contact between the gate and the mesa sidewall. The airbridges are fabricated by modifying the electron-beam exposure pattern for T-gates
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor technology; AlInAs-GaInAs; AllnAs/GaInAs; HEMTs; T-gates; critical region; electron-beam exposure pattern; integrated micro-airbridges; mesa sidewall contact problems;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941104
