Title :
WDM receiver chip with high responsivity
Author :
Cremer, C. ; Schier, M. ; Huber, Herbert ; Kunkel, W. ; Bauer, J.G. ; Rieger, Jana ; Schimpe, R. ; Strzoda, R.
Author_Institution :
Res. Labs., Siemens AG, Munich
fDate :
9/15/1994 12:00:00 AM
Abstract :
A semiconductor optical amplifier, a grating demultiplexer and a photodiode array were integrated in InGaAsP/InP to form a WDM receiver chip. 10 wavelength channels (TE or TM polarisation) in the 1.54 μm wavelength region with a channel spacing of 2 nm were detected with a crosstalk of less than -20 dB and a responsivity of up to 8 A/W
Keywords :
III-V semiconductors; crosstalk; gallium arsenide; indium compounds; integrated optoelectronics; multiplexing equipment; optical receivers; wavelength division multiplexing; 1.54 micron; InGaAsP-InP; TE polarisation; TM polarisation; WDM receiver chip; channel spacing; crosstalk; grating demultiplexer; integrated device; photodiode array; responsivity; semiconductor optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941066
