AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density

Author

Behtash, R. ; Tobler, H. ; Neuburger, M. ; Schurr, A. ; Leier, H. ; Cordier, Y. ; Semond, E. ; Natali, F. ; Massies, J.

Author_Institution

DaimlerChrysler AG, Ulm, Germany

Volume

39

Issue

7

fYear

2003

fDate

4/3/2003 12:00:00 AM

Firstpage

626

Lastpage

627

Abstract

Al_0.27Ga_0.73N/GaN HEMTs have been realised on resistive Si(111) substrates. The epitaxial structure was grown by MBE yielding a channel mobility of 1440 cm²/Vs (room temperature) and a sheet carrier density of 9.6e12 cm^-2. Large signal evaluation of transistors with gate length of 0.25 μm and gate width of 2×125 μm yields up to 1.65 W CW output power at 2 GHz corresponding to a power density of 6.6 W/mm. These results are thought to represent the highest output power density so far achieved for GaN-based HEMTs on silicon substrates.

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; carrier density; carrier mobility; gallium compounds; microwave power transistors; molecular beam epitaxial growth; power HEMT; wide band gap semiconductors; 0.25 micron; 1.65 W; 2 GHz; 6.6 W/mm output power density; Al_0.27Ga_0.73N-GaN; AlGaN/GaN HEMTs; CW output power; MBE; Si; channel mobility; epitaxial structure; gate length; gate width; large signal evaluation; resistive Si(111) substrates; sheet carrier density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030395

Filename

1194148