Influence of N on the electron transport in (Ga,In)(N,As) probed by magnetotransport under hydrostatic pressure

Incorporation of small amounts of nitrogen into GaAs and (Ga,In)As results in considerable changes of the electronic properties of these materials. Whereas the optical properties have already been extensively studied, there is little knowledge about the effects of nitrogen incorporation on the electronic transport behaviour of these III-V alloys. Magnetoresistance (MR) and Hall measurements at temperatures of 2-280 K and fields up to 10 T show large negative MR effects for n-type samples, whereas p-type samples behave like conventional III-V alloys. Results of magnetotransport measurements under hydrostatic pressure up to 20 kbar for n-type (Ga, In)(N, As) samples are presented. All the results can be explained qualitatively by the energetic and spatial disorder effects induced by N in the conduction band.