• DocumentCode
    1183083
  • Title

    Reliability considerations of hot-carrier induced degradation in analogue nMOSFET amplifier

  • Author

    Kurachi, Ikuo ; Forbes, L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR
  • Volume
    30
  • Issue
    19
  • fYear
    1994
  • fDate
    9/15/1994 12:00:00 AM
  • Firstpage
    1568
  • Lastpage
    1570
  • Abstract
    A successful implementation of substrate current and gain degradation models for an nMOSFET amplifier is demonstrated. The substrate current has to be taken into consideration in order to predict the drain conductance degradation. It is shown that the Vgs bias point for the nMOSFET amplifier is very limited when reliability is taken into consideration
  • Keywords
    CMOS integrated circuits; amplifiers; circuit reliability; hot carriers; linear integrated circuits; CMOS; analogue nMOSFET amplifier; bias point; drain conductance degradation; gain degradation models; hot-carrier induced degradation; reliability; substrate current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941090
  • Filename
    326386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1183083