Title :
Study of electrical and physical properties of PrxAl2−xO3 as metal-oxide-semiconductor gate dielectric
Author :
Ziming Zhang ; Huiqin Ling ; Ming Li
Author_Institution :
State Key Lab. of the Metal Matrix Composites, Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
The electrical and physical properties of PrxAl2-xO3 on metal-oxide-semiconductor gate dielectric were investigated. Amorphous PrxAl2-xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm, respectively. Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500°C annealing. The films still remained amorphous after 900°C annealing for 5 min. A mixture of Pr, Al, O and Si observed at the interface between the film and the substrate was argued to be Pr-Al-silicate. Post-annealing is demonstrated to be essential for the films in order to get good electrical property.
Keywords :
aluminium compounds; amorphous semiconductors; annealing; electron beam deposition; high-k dielectric thin films; leakage currents; permittivity; praseodymium compounds; semiconductor thin films; vacuum deposition; PrxAl2-xO3; amorphous films; dielectric constant; electrical properties; electron-beam evaporation deposition; leakage current; metal-oxide-semiconductor gate dielectric; physical properties; post-annealing; size 15 nm; size 18 nm; size 3.3 nm; temperature 500 degC; temperature 900 degC; time 5 min; voltage 1 V; Annealing; Dielectric constant; Films; Hafnium compounds; Leakage currents; Logic gates; Silicon; CMOS integration; PrxAl2-xO3; electron-beam evaporation; high-k gate dielectrics;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2014 15th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICEPT.2014.6922651
