Band structure calculation of InGaAsN//GaAs, InGaAsN//GaAsP//GaAs and InGaAsN//InGaAsP//InP strained quantum wells

The authors have calculated the band structure of 1.3-μm InGaAsN/GaAs(N)/GaAs compressively strained quantum wells (QW) using the band anticrossing model and an eight-band k.p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent. Because of the high compressive strain in the QW, strain-compensated structures may be required in order to grow stable multiple QWs; with this in view, the band structure of InGaAsN/GaAsP/GaAs QWs emitting at 1.3 μm was studied. Dilute nitride structures also offer the possibility of growing tensile-strained QW lasers emitting at 1.55 μm on an InP substrate. In order to evaluate the potentialities of such structures, the band characteristics of InGaAsN/InGaAsP/InP heterostructures were determined with a TM-polarised fundamental transition around 1.55 μm.