Title :
Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities
Author :
Felici, M. ; Cesari, V. ; Polimeni, A. ; Frova, A. ; Capizzi, M. ; Choi, Y.D. ; O, B. ; Yu, Y.-M. ; Nabetani, Y. ; Ito, Y. ; Okuno, T. ; Kato, T. ; Matsumoto, T. ; Hirai, T. ; Sou, I.K. ; Ge, W.K.
Author_Institution :
Dipt. di Fisica, Univ. di Roma, Italy
Abstract :
The authors studied the effect of hydrogen irradiation on the optical properties of ZnTe, ZnTe1-ySy (y=0.015) and ZnSe1-xOx (x=0.0023, 0.0057 and 0.009) epilayers. Photoluminescence measurements show the full passivation of O-related recombination bands in ZnTe and ZnTe0.985S0.015 samples unintentionally doped with oxygen. However, hydrogen irradiation does not affect the bandgap reduction following O incorporation in ZnSe1-xOx alloys. This lack of interaction between O and H in ZnSe1-xOx points toward a scarce localised character in the ZnSe1-xOx band edges, as supported by the study of the temperature dependence of the ZnSe1-xOx bandgap.
Keywords :
II-VI semiconductors; energy gap; hydrogen; impurities; oxygen; passivation; photoluminescence; semiconductor doping; semiconductor epitaxial layers; zinc compounds; H2; II-VI materials; ZnSeO; ZnTe; ZnTeS; hydrogen irradiation; isoelectronic oxygen impurities; lattice ionicity; oxygen doping; passivation; photoluminescence; recombination bands;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040912
