Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

Author

Ji, L.W. ; Su, Y.K. ; Chang, S.J. ; Hung, S.C. ; Chang, C.S. ; Wu, L.W.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

151

Issue

5

fYear

2004

Firstpage

486

Lastpage

488

Abstract

InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10 nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

Keywords

III-V semiconductors; MOCVD coatings; electroluminescence; gallium compounds; indium compounds; light emitting diodes; nanoelectronics; quantum dots; quantum wells; self-assembly; wide band gap semiconductors; 10 nm; 3 nm; 68.4 meV; InGaN-GaN; SAQD active layers; band-filling effect; blue LED; blue shift; electroluminescence; exitons; injection current; interrupted growth method; metal-organic chemical vapour deposition; nitride-based light emitting diodes; quantum wells; self-assembled quantum dot;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20040997

Filename

1367449