Study of the return loss performance of an improved TSVs structure

With the development of the integrated circuits, there is an inevitable trend in the development of the electronics industry, that the electronic devices become much smaller in shape, and integrated with higher density within, and more and more functionality. 3D SIP (System in Package) has become the mainstream technology for the microsystem integration. Meanwhile, the through silicon via (TSV) is the core to the 3D SIP and even to the three-dimensional integrated circuit (3D IC). In this paper, an improved TSVs structure is put forward and analyzed in this paper. We used finite element method simulation to illustrate the return loss performance. And the results dedicates that the return loss performance of the improved TSV structure is better than traditional TSV. And some factors that affect the performance of the improved TSV have been analyzed.