A submilliampere-threshold multiquantum-well AlGaAs laser without facet coating using single-step MOCVD

Author

Narui, Hironobu ; Hirata, Shoji ; Mori, Yoshifumi

Author_Institution

Sony Corp. Res. Center, Yokohama, Japan

Volume

28

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

4

Lastpage

8

Abstract

An extremely low threshold current, of 0.88 mA under continuous wave (CW) operation was obtained for a three-quantum-well AlGaAs-GaAs laser without facet coating at room temperature. This laser was fabricated using only single-step metalorganic chemical vapor deposition (MOCVD) on a nonplanar GaAs substrate. The energy conversion efficiency from input electric power to light output power was 42% at 1 mW/facet, which is the highest value for all types of lasers. The laser beam shape was nearly round with an aspect ratio of 0.86

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 0.88 mA; 42 percent; AlGaAs-GaAs laser; CW lasing; GaAs; MQW; aspect ratio; continuous wave; diode lasers; energy conversion efficiency; input electric power; laser beam shape; light output power; low threshold current; metalorganic chemical vapor deposition; multiquantum-well; nonplanar GaAs substrate; room temperature; round beam shapes; semiconductors; single-step MOCVD; submilliampere-threshold; three-quantum well; Chemical lasers; Chemical vapor deposition; Coatings; Energy conversion; Gallium arsenide; MOCVD; Power generation; Power lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.119498

Filename

119498